New 10-Gbit/sec DFB laser diode module features integrated EA modulator

June 28, 2002--California Eastern Laboratories (CEL) has announced the availability of a new NEC multiple quantum well (MQW) DFB laser diode module featuring an integrated electro-absorption (EA) modulator.

Jun 28th, 2002

June 28, 2002--California Eastern Laboratories (CEL) has announced the availability of a new NEC multiple quantum well (MQW) DFB laser diode module featuring an integrated electro-absorption (EA) modulator. Designed for 10-Gbit/sec transmission of up to 40 km over standard singlemode fiber, the new NX8560LJ-CC is designed for DWDM systems and wavelength selection according to ITU-T G.692 (the full C-Band).

Monolithically integrating the EA modulator saves space and simplifies a system's design. It also lowers cost and consumes less power than a discrete CW/modulator design. Among other features, the NX8560LJ-CC offers high optical output performance with low modulation voltage and low threshold current. Specifics include:


  • Pf Output Power (under modulation): -1 dBm min
  • VMOD Modulation Voltage: 3 V max
  • ITH Threshold Current: 20 mA max
  • Wavelength: ITU grid

The NX8560LJ-CC is a monolithically integrated MQW-structured DFB laser diode and modular chip. It's housed in a hermetically sealed, seven-pin butterfly package with GPO connector RF input. It features an internal optical isolator, monitor photodiode, and thermistor, plus a thermo-electric cooler for increased efficiency. It is available now. For a data sheet, visit www.cel.com.
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