InGaAs pin detectors
InGaAs pin detectors
These InGaAs pin detectors are designed for OC-192 (10-Gbit/sec) and OC-768 (40-Gbit/sec) fiber-optic communications applications. The pins feature a semi-insulating InP substrate for reducing parasitic effects, electronic co-planar waveguide output with 50-ohm output impedance matching on the chip, microwave footprint with signal-ground-signal (100-micron spacing) for on-wafer RF testing using standard microwave probes, and front-illuminated mesa diode to eliminate "tail effects" as seen in the planar diode technology. The use of "air bridge" technology allows the detectors to be front-illuminated for coupling efficiency and photo responsivity without increasing the parasitics.
Discovery Semiconductors Inc.
Cranbury, NJ