Albis Opto launches new photodiodes

April 15, 2005
April 15, 2005 Rueschlikon, Switzerland -- Albis Optoelectronics, a developer and manufacturer of photodiodes for analog and digital applications, has introduced its X-tra Small line of photodiodes, which measure 300 x 350 micron. According to the company, the chips offer high responsivity, low capacitance, and low bias voltages of typically 1.5 V, while occupying minimal space on TO-headers.

April 15, 2005 Rueschlikon, Switzerland -- Albis Optoelectronics, a developer and manufacturer of photodiodes for analog and digital applications, has introduced its X-tra Small line of photodiodes, which measure 300 x 350 micron. According to the company, the chips offer high responsivity, low capacitance, and low bias voltages of typically 1.5 V, while occupying minimal space on TO-headers.

The chips, qualified in accordance with Telcordia GR-468, are aimed at the growing FTTX and 10G markets, according to the company.

The product line consists of three new designs:

* PDCS80T-XS, a photodiode chip with a 5-GHz bandwidth for digital and analog FTTX receivers and 4G Fiber Channel modules

* PDCS60T-XS, a photodiode chip aimed at 10GBase-LRM applications , with a 60-micron active area, low capacitance of 200 fF, and a 10-GHz bandwidth.

* PDCS32T-XS, a photodiode chip with a 12-GHz bandwidth for 10G Ethernet, 10G Fiber Channel, and OC-192/STM-64 applications

"Our qualified technology provides an optimum trade-off between the size of the detector area and low capacitance," contends Markus Blaser, Albis CTO. "This results in better sensitivity and larger bandwidths, a necessity for long wavelength multimode applications, as covered by the emerging 10GBase-LRM standard."

The product is currently shipping, with samples available.

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