Hamamatsu Photonics debuts IR-enhanced silicon PIN photodiodes

July 19, 2010
JULY 19, 2010 -- Hamamatsu Photonics has introduced the S11498 series, a new range of silicon detectors and image sensors designed to offer enhanced near-infrared sensitivity.

JULY 19, 2010 -- Hamamatsu Photonics has introduced the S11498 series, a new range of silicon detectors and image sensors designed to offer enhanced near-infrared sensitivity.

Hamamatsu says it has developed a laser processing technology by which MEMS structures can be fabricated on the silicon surface that act to reduce reflections and increase the surface area of the active element. This process drastically increases the sensitivity in wavelengths longer than 800 nm, according to the company.

The S11498 series is a family of PIN photodiodes using this new technology to offer a high sensitivity of 0.4 A/W at 850 nm. This is twice the sensitivity of a typical silicon photodiode, Hamamatsu says. The S11498 series is available in 0.2-mm diameter and 0.1-mm diameter active area types, which offer 1.5-GHz and 2.0-GHz bandwidths respectively. Both feature low capacitances and are packaged in high reliability TO-18 packages.

Due to the increased sensitivity in the near-infrared region, the S11498 IR-Enhanced PIN photodiodes are suitable for a wide range of applications, concludes Hamamatsu. These include fiber communications, high-speed measurements, and optical interconnection, among others.

Visit Hamamatsu Photonics

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