Kopin Corporation (NASDAQ: KOPN), a provider of heterojunction bipolar transistors (HBTs) for wireless and fiber-optic telecom applications, announced it has entered into a Joint Development Agreement with Rockwell Science Center (RSC) of Thousand Oaks, California, a developer of ultra-high-speed device and circuit technologies and advanced HBT technologies. The purpose of the agreement is to accelerate the development of indium phosphide (InP)-based HBTs for commercial applications. The agreement calls for Kopin to develop InP-based HBT structures and for RSC to create processing technologies for devices and circuits as well as to establish the long-term reliability of InP HBTs.

Compared to GaAs-based HBTs, InP-based HBTs demonstrate superior speed, lower operating voltage, higher power efficiency and better thermal properties. Kopin has been growing carbon-doped InP-based HBTs with excellent performance using its proprietary and patent-pending process in production organometallic chemical vapor deposition (OMCVD) systems. This breakthrough should enable a new generation of high-performance, reliable, cost-effective InP-based HBT circuits for a variety of exciting applications, including 40 gigabit per second (Gb/s) fiber-optic circuits (OC-768) and efficient power amplifiers for third generation wireless phones.

About Rockwell Science Center:

Rockwell Science Center (RSC) develops technologies including materials, electronics, imaging, optics, information and computation. For more information, visit www.rsc.rockwell.com.

About Kopin:

Kopin Corporation is a manufacturer of GaAs-based transistor products and miniature flat panel displays for advanced communications and digital imaging applications. The Company's GaAs-based HBT transistors are used to produce power amplifier circuits for CDMA, GSM, TDMA and PCS wireless telephone handsets as well as multi-gigabit/second circuits for fiber optic and Internet data transmission. For more information, visit www.kopin.com.