'World's highest' density SRAM on 90nm technology

13 March 2003 -- Cypress Semiconductor claims that its six-transistor 90nm RAM9 process technology has achieved the world's highest-density SRAM in silicon.

13 March 2003 -- Cypress Semiconductor claims that its six-transistor 90nm RAM9 process technology has achieved the world's highest-density SRAM in silicon.

Operating at OC-48 speeds and above, the 72Mbit/s 'No Bus Latency' SRAM supports next-generation networking applications.

"The development of the 72Mbit/s NoBL synchronous SRAM on a 90-nm footprint solidifies our leadership in the SRAM market," said Antonio Alvarez, senior VP for Cypress' Memory Products Division.

"Communication customers continue to seek higher-density, cost-effective SRAMs for high-speed networking applications," said Betsy Van Hees, senior memory analyst for iSuppli Corporation. "With the development of the 72Mbit/s NoBLsynchronous SRAM on 90nm process technology, the comapny has proven its ability to be a leader in the SRAM market."

RAM9 is being implemented in Cypress' Fab 4 facility in Bloomington, Mi, US. In addition to the SRAM, two other product families are currently in design and will achieve functional silicon by late 2003 and early 2004. Samples of the 72-Mbit sNoBLynchronous SRAMs will be available during the second half of 2003.

The new product families include the next-generation networking Quad Data Rate SRAMs that operate at data rates beyond 300MHz; and low-power More Battery Life (MoBL) SRAMs, which use less power than standard SRAMs.

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