Alight acquires Infineon's VCSEL platform

September 26, 2005 Copenhagen, Denmark -- Alight Technologies today announced that it has reached a definitive agreement with Infineon Technologies to acquire Infineon's 1300-nm GaInNAs vertical cavity surface emitting laser (VCSEL) platform. According to a press release, the transaction includes manufacturing equipment and IPR rights, as well as 1300-nm wafers. Financial details of the transaction were not disclosed.

September 26, 2005 Copenhagen, Denmark -- Alight Technologies today announced that it has reached a definitive agreement with Infineon Technologies to acquire Infineon's 1300-nm GaInNAs vertical cavity surface emitting laser (VCSEL) platform. According to a press release, the transaction includes manufacturing equipment and IPR rights, as well as 1300-nm wafers. Financial details of the transaction were not disclosed.

"We are addressing a growing need in the market for high-power and high-speed single mode VCSELs at 1300 nm," contends Steen Gundersen, CEO of Alight. "The combination of a qualified material platform and our add-on technology creates a unique opportunity for Alight and our partners, and we are on track to make it happen."

Alight says it is enabling VCSELs with high, singlemode power by applying its proprietary Photonic Band Gab (PBG) structures. The company says its PBG-VCSELs target emerging markets for telecom access, FTTH, and high bit-rate data communications.

"Alight has proven unique benefits of its PBG technology, and our edge is that we can improve the performance of standard VCSELs," continues Gundersen. "With this investment we have secured ownership of a leading 1300-nm VCSEL material platform, and we are on track to go from promising prototypes to products that can make a difference in the marketplace."

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