ZnO wafer substrate

June 14, 2017
ZnO has the potential to become the substrate material of choice for GaN. Like GaN, ZnO has a wurtzite structure, with lattice constants closely matched to GaN (a=3.249, c=5.205). ZnO is exactly lattice matched to InGaN with a 22% In content. ZnO is a soft compliant material that is believed to probably and may take up the lattice stress in preference to the growing GaN layer. ZnO dissociates in ammonia at temperatures above 600 deg.C. With its wide bandgap, Zinc Oxide could prove very useful in optical applications as well as many high speed electronics. ZnO may also be used as a substrate for epitaxial growth.

Request More Information

By clicking above, I acknowledge and agree to Endeavor Business Media’s Terms of Service and to Endeavor Business Media's use of my contact information to communicate with me about offerings by Endeavor, its brands, affiliates and/or third-party partners, consistent with Endeavor's Privacy Policy. In addition, I understand that my personal information will be shared with any sponsor(s) of the resource, so they can contact me directly about their products or services. Please refer to the privacy policies of such sponsor(s) for more details on how your information will be used by them. You may unsubscribe at any time.