Discovery Semiconductors releases highly linear photodiodes for RF-over-fiber applications
OCTOBER 29, 2009 -- Discovery Semiconductors has introduced highly linear photodiodes DSC100S for RF-over-fiber applications covering a frequency range of DC to 6 GHz.
OCTOBER 29, 2009 -- Discovery Semiconductors Inc. has introduced highly linear photodiodes DSC100S for RF-over-fiber applications covering a frequency range of DC to 6 GHz. The photodiodes have a nominal third-order output intercept point (OIP3) of >45 dBm and second order output intercept point (OIP2) of >55 dBm for DC photocurrents in excess of 30 mA. The development effort for these photodiodes was partially funded by the Defense Advanced Research Projects Agency (DARPA). The devices can work at 1,310-nm as well as 1,550-nm wavelengths.
"These devices besides higher linearity will provide better gain, noise figure, as well as dynamic range for the intensity and frequency modulated analog photonics links, both directly modulated as well as externally modulated," says Abhay Joshi, president and chief executive officer. "They will mainly serve various commercial RF-over-fiber market segments that improve wireless coverage in 'dead zones' such as city subways, mines, tunnels, interiors, and basements of the buildings, to name a few. Some of the intended usage will be for fiber distribution of signals such as GPS, GSM, CDMA, WiMAX, and the new LTE."
"High linearity photodiode technology is important for a myriad of defense applications including antenna remoting, optoelectronic microwave oscillators, filters and channelizers, and other aperture interface functions," adds Ron Esman, the MTO program manager at DARPA.
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