Mitsubishi Electric develops new optical transmission devices for next-generation 100 Gb Ethernet applications
MARCH 11, 2010 -- Mitsubishi Electric Corp. has developed transmission devices featuring characteristics for super high-speed, 100 Gb Ethernet applications that multiplex four wavelength channels of 25 Gbps-speed optical signals in parallel.
Of the two devices, the high-speed, direct modulation-distributed feedback (DFB) laser diode, which is incorporated in devices that send out optical signals, features modulated waveforms of 25 Gbps. The photo diode array, which is incorporated in receiver modules, has a responsivity of 0.88 amperes per watt (A/W).
Part of these development achievements stem from a government project called "R&D on High-speed Optical Transport System Technologies (High-Speed Low-power-consumption Optical Transport Technology for Ethernet)" overseen by the Ministry of Internal Affairs and Communications in Japan.
Transmission volume over optical communication networks is increasing. To respond to this increase, the IEEE is expected to set a standard for 100 Gb Ethernet (100GbE) in June 2010, which will increase the maximum transmission speed from the current 10 Gbps Ethernet standard. Specifically, within transmission distances of 100 meters to 10 kilometers, such as between local data centers and inside buildings, a standard called "100GBASE-LR4" is being considered as a method to transmit data at 100 Gbps by wavelength multiplexing four channels of 1.3 micrometer-wavelength 25 Gbps signals in parallel. To send and receive these optical signals, each end requires four optical semiconductor chips that operate at 25 Gbps: four DFB laser diodes to send optical signals and four photo diodes to receive these signals.
The new product achieves direct modulation eye diagrams with high mask margin of 26% or more, at a low power consumption of 0.1 W or less. It also features four 25 Gbps photo diodes with high responsivity of 0.88 A/W integrated in one array chip.