10G InGaAs photodiode targets long reach systems

March 20, 2006 Somerset, NJ -- NSG America recently introduced its 10G InGaAs Avalanche Photodiode (APD), a device suitable for optical communications applications with long reach requirements, including SONET OC-192 / SDH STM-64, DWDM long haul systems, and 10-Gbit/sec Ethernet.

March 20, 2006 Somerset, NJ -- NSG America recently introduced its 10G InGaAs Avalanche Photodiode (APD), a device suitable for optical communications applications with long reach requirements, including SONET OC-192 / SDH STM-64, DWDM long haul systems, and 10-Gbit/sec Ethernet.

With extremely low dark current and a spectral response of 1000 to 1625 nm to detect very small amounts of light over a wide wavelength range, the 10G APD employs a separate absorption and multiplication (SAM) structure using InGaAs and InP, respectively. The device is sold as a chip-on-carrier assembly and uses a back illuminated structure. The active diameter of the chip is 22 µm and is assembled on a ceramic sub-carrier.

The front side the chip harbors five Au bumps measuring 10 µm high. The center bump corresponds to an anode, under which there is an active area with a 22 µm diameter. The other four Au bumps are placed on the corners of the chip and are used for bonding purposes. On back of the chip, the contact corresponds to a cathode and forms an aperture of 100-µ m diameter at the center.

"NSG is offering this 10-Gbit/sec APD to meet the demands of the metro and long haul markets. We use a planar structure for high reliability," explains Dr. Simin Cai, president and CEO of NSG America. "Our experience in material based manufacturing gives NSG a technological advantage in producing APDs which are reliable and low in cost."

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