French R&D consortium IRT Nanoelec says it has successfully integrated a III-V/silicon laser and silicon Mach Zehnder modulator for 25-Gbps optical transmission. Alternative approaches to 10-km 25-Gbps optical engines traditionally have relied on an external source, the group points out.
The effort represents a collaboration among IRT, Leti, STMicroelectronics, Samtec and Mentor Graphics. The group created silicon photonics circuits with an integrated modulator on a 200-mm SOI wafer; 300-mm wafers also could be used in the near future, the group adds. The group then directly bonded a two-inch wafer of III-V material on the silicon wafer. The hybrid wafer was then processed using conventional semiconductor and/or MEMS process steps to produce an integrated modulator-and-laser transmitter.
IRT Nanoelec launched its silicon photonics program in 2012, with core members Mentor Graphics, STMicroelectronics, and CNRS.
For related articles, visit the Optical Technologies Topic Center.
For more information on optical subsystems and suppliers, visit the Lightwave Buyer's Guide.
IRT Nanoelec integrates laser on silicon with modulator
French R&D consortium IRT Nanoelec says it has successfully integrated a III-V/silicon laser and silicon Mach Zehnder modulator for 25-Gbps optical transmission. Alternative approaches to 10-km 25-Gbps optical engines traditionally have relied on an external source, the group points out.
Mar 20th, 2016
