GTRAN, Inc. announced it has shipped what it claims to be the first 40Gb/s products for SONET applications. The first products shipped include 40Gb/s transimpedance amplifiers (TIA) and limiting amplifiers (LA). These ICs were manufactured utilizing GTRAN's recently released 200GHz Indium Phosphide based wafer fabrication process. Initial results indicate the process yields are very consistent resulting in fabrication of robust chips with very low power consumption.
The TIA achieves a 300 ohm transimpedance in 45GHz bandwidth. Operating with dual positive and negative 3.3V supplies it dissipates 150mW of power. Differential outputs are available to ease system design.
The LA has 40 GHz bandwidth. It achieves a differential gain greater than 30dB with an input sensitivity of 10mV. The device operates on a single -4.2V power supply with a power dissipation of 500mW. The amplifier has on-chip terminations for inputs and outputs. Additional features include the ability to externally adjust the DC offset voltage.
GTRAN is shipping the first units of its OC-768 LA chips in a leaded ceramic package. The conductor lines are defined using thin-film processing techniques to achieve the high degree of impedance control that is necessary at these speeds. Additionally, its surface mount format provides for easy integration.
About GTRAN, Inc.:
GTRAN, Inc. is a supplier of OC-192 and OC-768 transponder, opto-electronic integrated circuits and optical component solutions for the optical communication markets. For more information, visit www.gtran.com.