Wide spectral response InGaAs PIN photodiode

9 JUNE 2009 -- Hamamatsu Photonics introduce the new G10899 series of InGaAs PIN photodiodes, featuring a spectral response range of 0.5 to 1.7 µm.

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9 JUNE 2009 -- Hamamatsu Photonics (search Lightwave for Hamamatsu) introduce the new G10899 series of InGaAs PIN photodiodes, featuring a spectral response range of 0.5 to 1.7 µm. Standard InGaAs PIN photodiodes only offer a useful response range from 0.9 to 1.7 µm, with silicon photodiodes being used to cover from 400 nm to 1.1 µm, Hamamatsu says. The new G10899 can provide the end user with the ability to implement only one detector, where in the past they might need two, the company asserts.

This feature lends itself well to the optical communications field, since the G10899 has excellent sensitivity at three of the commonly used wavelengths for optical communications, 850 nm, 1310 nm, and 1550 nm, says Hamamatsu. A standard InGaAs detector would have very low response at 850 nm, the company says.

The G10899 series is available in three standard active area sizes, 1, 2, and 3 mm, with the 1-mm device operating at bandwidths up to 45 MHz and with a low dark current of typically 1 nA.

Within the optical communications sector, the G10899 series will prove most useful in optical power meters, OTDRs, tuneable laser diode monitors, free space communications, and well as other network monitoring applications, the company predicts.

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