CST Global announces InGaAs photodiode service
January 16, 2003--CST Global Ltd. today announced a further development to its device library with the launch of a customised InGaAs PIN photodiode fabrication service.
CST Global Ltd. today announced a further development to its device library with the launch of a customised InGaAs PIN photodiode fabrication service.
The photodiodes are targeted at 1250-1650-nm applications. Initial tests on the devices fabricated have demonstrated dark currents < 0.02nA @ 5V and responsivity of 0.95 A/W@ 1550 nm.
Devices are available immediately in production volumes and can be designed to meet a range of customer design specifications, including:
• custom epi design and supply
• mask design and supply
• small and large area devices
• top entry and bottom entry options
• partial fabrication through to complete devices
• wafer, array, die and sub-mount options
The new service, in partnership with epi wafer foundry IQE, enables CST to supply InGaAs photodiodes in a wide range of device formats.
"This announcement is further evidence of CST Global's growing capability in the optoelectronic compound semiconductor foundry market," contends Neil Martin, CST chief executive. "Outsourcing in the optoelectronics industry is gaining force as the way forward for the future, and when capabilities such as those offered by CST are available, it makes increasing commercial sense for companies throughout the industry," he adds.
For more information about CST Global Ltd., visit the company's Web site at www.compoundsemi.co.uk.