Spire receives grant to develop low-noise APDs

16 January 2004 Bedford, MA Lightwave -- Spire Corp. has received a six-month, $100,000 Small Business Innovative Research (SBIR) Phase I grant from the National Science Foundation to investigate low-noise avalanche photodiodes (APDs) in the 1 to 1.6 micron wavelength range. Achieving the program goal of lower noise APDs at 1.55 micron will enable higher-speed optical fiber communication systems with lower bit-error rates.

16 January 2004 Bedford, MA Lightwave -- Spire Corp. has received a six-month, $100,000 Small Business Innovative Research (SBIR) Phase I grant from the National Science Foundation to investigate low-noise avalanche photodiodes (APDs) in the 1 to 1.6 micron wavelength range. Achieving the program goal of lower noise APDs at 1.55 micron will enable higher-speed optical fiber communication systems with lower bit-error rates.

Spire's APDs will be made from a particular composition of the compound semiconductor AlGaSb that enhances hole ionization, which results in a lower-noise device. The AlGaAs material will be produced by Bandwidth Semiconductor, Spire's wholly owned subsidiary, using metal organic chemical vapor deposition (MOCVD), a thin-film semiconductor growth process that can also be used to synthesize intelligent multi-dimensional nanostructures.

Roger Little, chairman and CEO of Spire Corp., said, "With the telecomm industry experiencing some recovery, we are delighted to receive this award. Low-noise APDs are products that fit well with Bandwidth Semiconductor's capabilities and commercial directions."


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