Mitsubishi Electric monolithically integrated laser diode targets 43-Gbps RZ-DQPSK

March 4, 2011
Mitsubishi Electric Corp. (TOKYO:6503) says it has developed the first fully monolithically integrated laser diode for use in 43-Gbps return-to zero differential quadrature phase-shift keying (RZ-DQPSK) transmission.

Mitsubishi Electric Corp. (TOKYO:6503) says it has developed the first fully monolithically integrated laser diode for use in 43-Gbps return-to zero differential quadrature phase-shift keying (RZ-DQPSK) transmission.

The 43-Gbps RZ-DQPSK laser diode comprises a tunable laser array, an RZ Mach-Zehnder modulator, and a DQPSK Mach-Zehnder modulator. The device can tune over 95 channels at 40 nm over the 50-GHz ITU-T grid between 1572 and 1612 nm.

The chip measures 9.6x0.75mm, which Mitsubishi asserts is less than one-hundredth the size of conventional chips. This means the module's volume, including the chip, can be minimized to less than one-third of the size of conventional modules, Mitsubishi adds.

Mitsubishi says it plans to improve the device’s power output, power consumption, and production of clear optical waveforms in the future. It also plans to develop a light source for C-Band from 1530 nm to 1570 nm.

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