2D long wavelength VCSEL provides 30mW output power

May 26, 2005 Munich, Germany -- At the "LASER 2005: World of Photonics" tradeshow, Vertilas presented a 1550-nm VCSEL array that delivers an output power above 30mW. The company's proprietary long-wavelength VCSEL technology, in wavelengths ranging from 1300 to 2050-nm, is based on a low-resistive Buried Tunnel Junction (BTJ) design that reduces the heat dissipation of the laser and provides superior performance in output power and achievable data rates, according to the company.

According to the company, its two-dimensional VCSEL array combines parallel operating BTJ-VCSELs, multiplying the advantages of a single VCSEL. The array consists of VCSELs with a 10 µm active diameter, and generates a total output power up to of 32 mW and a maximum electrical to optical power conversion efficiency of 22%. The threshold current is as low as 16 mA. Due to the low-resistive BTJ-design, the differential series resistance minimal, according to the company.

The company says its BTJ-technology and VCSEL array design enables customers to address a number of new market segments in communications and sensing with products that feature lower power dissipation, decreased system size, and lower cost. Other applications for the technology include printing, materials processing, and pumping of solid state lasers.