Hamamatsu intros new InGaAs APD

JULY 17, 2007 -- The device has extremely low capacitance (typically 0.35 pF), enabling operation with industry standard IC chips and simplifying high-speed circuit design, say Hamamatsu representatives.

JULY 17, 2007 -- Hamamatsu Photonics (search for Hamamatsu) has introduced the G8931-04 InGaAs avalanche photodiode (APD) receiver, which it claims offers higher sensitivity than conventional InGaAs PIN photodiodes. The device features a very high speed of typically 4 GHz. When combined with its very high sensitivity, the G8931-04 receiver is ideally suited for long distance optical communications applications, says the company.

At telecommunications wavelengths of 1310 nm and 1550 nm, the InGaAs diode has typical photo sensitivity of > 0.8 A / W and can operate with an avalanche gain of >= 10, thus giving an output of at least 8 A / W. The device has extremely low capacitance (typically 0.35 pF), enabling operation with industry standard IC chips and simplifying high-speed circuit design, say Hamamatsu representatives. The device can be supplied with a fiber-optic pigtail, or it can be supplied with standard fiber connector types to meet customer requirements, for example SC/SPC, FC/SPC, etc.

The product's characteristics also make it a suitable device for other applications such as range finding, OTDR, test equipment, and low light level analytical infrared measurements.


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