OSI OptoElectronics Inc

12525 Chadron Ave
Hawthorne, CA 90250
United States
310-355-2812
310-644-1727
1160

Products

Operates between 350nm to 1100nm - Utilized for backscatter-reflectivity measurements.
The new Silicon is process for enhanced responsivity over 200-400nm and sensitivity down to 190nm.
OSI Optoelectronics offers UV-enhanced planar diffused silicon photodiodes specially designed for low-light-level detection in the ultraviolet spectral range. The product series...
A unique class of Silicon Photodiode designed for additional sensitivity in the X-Ray region without use of scintillator crystals or screen. Sensitivity ranges from 200nm to 0...
Detector of choice for remote temperature measurement that works on the principle that ratio of radiation intensities from two adjacent wavelength can be compared to standard ...
Linear or 2 Dimensional array with active areas offered in different sizes and pitch to suit variety of applications. Offered in LCC, DIP chip carriers, PCB, ceramic, or monolithic...
FCI-InGaAs-300B1XX series are multifunctional backside illuminated photodiode/arrays. They come standard in a single element diode or 4 - or 8- elements array with active area...
FCI-InGaAs-QXXX series are large active area InGaAs photodiodes segmented into four separate active areas. These photodiodes come in 1mm and 3mm active area diameter. The InGaAs...
FCI-H125/250G-GaAs-100 series with active area sizes of 100µm is a compact integration of our high speed GaAs photodetector with a wide dynamic range transimpedance amplifier....
The FCI-GaAs-XXm is a 4 or 12 element GaAs PIN photodetector array designed for high speed fiber receiver and monitoring applications

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