Discovery Semiconductors is an industry leader in manufacturing ultrafast, high optical power handling InGaAs photodetectors, RF over fiber optical receivers, balanced optical...
The 2.2um cutoff, uncooled, InGaAs high speed photodiodes are hermetically sealed, fiber pigtailed, and designed for high optical power applications with minimum bandwidths of...
The DSC705 is a balanced InGaAs photodiode in “push-pull” configuration with each photodiode capable of handling high optical power up to +17 dBm. High Common Mode...
The xHLPD photodiode modules are designed for high power operation up to 10 GHz bandwidth and can deliver up to 4 V peak-to-peak (+16 dBm CW) RF output power. The photodiode is...
Discovery Semiconductors Inc., a leading supplier of optical receivers, test instruments and sub-systems, has introduced several new products using its Extended InGaAs Photodiode...
The DSC-R421 is a linear PIN + transimpedance amplifier that is primarily designed for 4-level Pulse Amplitude Modulation (PAM 4) and NRZ-ASK (PAM 2) modulation formats up to ...
Discovery Semiconductors’ (DSC) an innovator in manufacturing high reliability, space qualified, optical receivers announced today that its Space Qualified, Short Wave Infrared...
We have developed 10, 20, 30, and 40 Gb bandwidth balanced photoreceivers which have applications for both analog and digital fiber optic communications. The devices can operate...
High power, highly linear photodiodes enhance the overall dynamic range of LADAR systems in two ways: faithfully transferring optical return signal into RF domain with high coherent...
New Product Announcement: High Optical Power Handling Balanced Photodiodes to 5 GHz Bandwidth for Quantum Key Distribution (QKD) Discovery Semiconductors, an industry leader ...
The 2.2 micron cutoff, uncooled, InGaAs high speed Photodiodes are hermetically sealed, fiber pigtailed, and designed for high optical power applications with bandwidth up to ...
Discovery Semiconductors introduces 50 mA and higher current handling, extended InGaAs photodiodes for burgeoning applications at 1.2 to 2.2 micron wavelengths.As high power fiber...
We report a highly linear, high power handling InGaAs photodiode having a third order harmonic output intercept point of +53.7 dBm and an estimated OIP3 of +48.9 dBm up to 40 ...
We have manufactured rad-hard, InGaAs photodiodes using our proprietary Dual Depletion Region (DDR) technology with bandwidths exceeding 10 GHz. The devices demonstrate high reliability...
These high speed, low harmonic distortion, and high current handling photodiode modules are designed for high optical power applications with minimum bandwidths of 10, 14 and ...
Discovery Semiconductors High Speed InGaAs Photodiode and Balanced Photodiodes returned to Earth after 18 months on the International Space Station (ISS). They were part of the...
